Molecular Beam Epitaxy Lab
Our research focses on developing the world's highest-quality systems of carriers in GaAs confined to two or fewer-dimensions within epitaxial barriers. Our work provides samples for many of the leading research labs around the world to investigate the new physics that can be discovered when systems of electrons, or holes, or both, are confined to two or fewer dimensions.
We designed and completed a new gallium arsenide MBE machine, an order of magnitude cleaner than any other MBE chamber in the world.
Employing micro photo luminescence, we measure the electron density in clean, two-dimensional systems confined to GaAs quantum wells.
We evaluate the transport properties of various modulation doped AlAs 2D structures and formulate guidelines for sample optimization.
Direct any general questions about admission to the graduate program in Electrical Engineering at Princeton to Colleen Conrad (cconrad@princeton.edu). If you are interested in joining our lab, mention Prof. Pfeiffer in your application essay.
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