Publications from arXiv.org
Many of our publications over the last few years have been put on the archive, which you can find here. The advantage is that anyone can access these papers.
Publications
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R. Lo Nardo, G. Wolfowicz, S. Simmons, A.M. Tyryshkin, H. Riemann, N.V. Abrosimov, P. Becker, H.J. Pohl, M. Steger, S.A. Lyon, M.L.W. Thewalt, J.J.L. Morton, “Spin relaxation and donor-acceptor recombination of Se+ in 28-silicon,” Phys. Rev. B, 92, 16, 165201 (2015). DOI: 10.1103/PhysRevB.92.165201
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A.J. Sigillito, A.M. Tyryshkin, S.A. Lyon, “Anisotropic Stark Effect and Electric-Field Noise Suppression for Phosphorus Donor Qubits in Silicon,” Phys. Rev. Lett, 114, 21, 217601, DOI: 10.1103/PhysRevLett.114.217601.C.C. Lo, M. Urdampilleta, P. Ross, M.F. Gonzalez-Zalba, J. Mansir, S.A. Lyon, M.L.W. Thewalt, J.J.L. Morton, “Hybrid optical-electrical detection of donor electron spins with bound excitons in silicon,” Nat. Mat., 14, 5, 490-494, (2015), DOI: 10.1038/NMAT4250.
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G. Pica, G. Wolfowicz, M. Urdampilleta, M.L.W. Thewalt, H. Riemann, N.V. Abrosimov, P. Becker, H.J. Pohl, J.J. L. Morton, R.N. Bhatt, S.A. Lyon, B.W. Lovett, “Hyperfine Stark effect of shallow donors in silicon,” Phys. Rev. B, 90, 19, 195204, (2014), DOI: 10.1103/PhysRevB.90.195204.
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T. Sekiguchi, A.M. Tyryshkin, S. Tojo, E. Abe, R. Mori, H. Riemann, N.V. Abrosimov, P. Becker, H.J. Pohl, J.W. Ager, E.E. Haller, M.L.W. Thewalt, J.J.L. Morton, S.A. Lyon, K.M. Itoh, “Host isotope mass effects on the hyperfine interaction of group-V donors in silicon,” Phys. Rev. B, 90, 12, 121203, (2014), DOI: 10.1103/PhysRevB.90.121203.
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C.C. Lo, S. Simmons, R. Lo Nardo, C.D. Weis, A.M. Tyryshkin, J. Meijer, D. Rogalla, S.A. Lyon, J. Bokor, T. Schenkel, J.J.L. Morton, “Stark shift and field ionization of arsenic donors in Si-28-silicon-on-insulator structures,” App. Phys. Lett. 104, 19, 193502, (2014), DOI:10.1063/1.4876175.
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A.J. Sigillito, H. Malissa, A.M. Tyryshkin, H. Riemann, N.V. Abrosimov, P. Becker, H.J. Pohl, M.L.W. Thewalt, K.M. Itoh, J.J.L. Morton, A.A. Houck, D.I. Schuster, S.A. Lyon, “Fast, low-power manipulation of spin ensembles in superconducting microresonators,” App. Phys. Lett. 104, 22, 222407, (2014), DOI:10.1063/1.4881613.
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G. Wolfowicz, A.M. Tyryshkin, R.E. George, H. Riemann, N.V. Abrosimov, P. Becker, H.J. Pohl, M.L.W. Thewalt, S.A. Lyon, J.J.L. Morton, “Atomic clock transitions in silicon-based spin qubits,” Nature Nanotechnology, 8, 561-564 (2013).
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C.D. Weis, C.C. Lo, V. Lang, A.M. Tyryshkin, R.E. George, K.M. Yu, J. Bokor, S.A. Lyon, J.J.L. Morton, T. Schenkel, “Electrical activiation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28,” App. Phys. Lett. 100, 17, 172104 (2012).
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Z.H. Wang, W.X. Zhang, A.M. Tyryshkin, S.A. Lyon, J.W. Ager, E.E. Haller, V.V. Dobrovitski, “Effect of pulse error accumulation on dynamical decoupling of the electron spins of phosphorus donors in silicon,” Phys. Rev. B, 85, 8, 085206, (2012).
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C.C. Lo, F.R. Bradbury, A.M. Tyryshkin, C.D. Weis, J. Bokor, T. Schenkel, S.A. Lyon, “Suppression of microwave rectification effects in electrically detected magnetic resonance measurements,” App. Phys. Lett. 100, 6, 063510 (2012).
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A.M. Tyryshkin, S. Tojo, J.J.L. Morton, H. Reimann, N.V. Abrosimov, P. Becker, H.J. Pohl, T. Schenkel, M.L.W. Thewalt,. K.M. Itoh, S.A. Lyon, “Electron spin coherence exceeding seconds in high-purity silicon,” Nature Materials, 11, 2, 143-147, (2012).
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R.M. Jock, S. Shankar, A.M. Tyryshkin, J.H. He, K. Eng, K.D. Childs, L.A. Tracy, M.P. Lilly, M.S. Carroll, S.A. Lyon, “Probing band-tail states in silicon metal-oxide-semiconductor heterostructures with electron spin resonance,” App. Phys. Lett., 100, 2, 023503 (2012).
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B.S. Passmore, D.C. Adams, T. Ribaudo, D. Wasserman, S. Lyon, P. Davids, W.W. Chow, E.A. Shaner, “Observation of Rabi Splitting from Surface Plasmon Coupled conduction State Transitions in Electrically Excited InAs Quantum Dots,” Nano Letters 11, 338-342, (2011).
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V. Lang, C.C. Lo, R.E. George, S.A. Lyon, J. Bokor, T. Schenkel, A. Ardavan, J.J.L. Morton, “Electrically detected magnetic resonance in a W-band microwave cavity,” Review of Scientific Instruments, 82, 034704 (2011).
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R.M. Brown, A.M. Tyryshkin, K. Porfyrakis, E.M. Gauger, B. Lovett, A. Ardavan, S.a. Lyon, G. Briggs, D. Andrew, J.J.L. Morton, “Coherent state transfer between an electron and nuclear spin in (15)N@C(60),” Phys Rev Lett. 106, 110504 (2011).
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C.C. Lo, V. Lang, R.E. George, J.J.L. Morton, A.M. Tyryshkin, S.A. Lyon, J. Bokor, T. Schenkel, “Electrically detected magnetic resonance of neutral donors interacting with a two-dimensional electron gas,” Phys Rev Lett 106, 207601 (2011).
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E. Abe, A.M. Tyryshkin, S. Tojo, J.J.L. Morton, W.M. Witzel, A. Fujimoto, J.W. Ager, E.E. Haller, J. Isoya, S.A. Lyon, M.L.W. Thewalt, K.M. Itoh, “Electron spin coherence of phosphorus donors in silicon: Effect of environmental nuclei,” Physical Review B 82, 121201 (2010).
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H. Tezuka , A.R. Stegner, A.M. Tyryshkin, S. Shankar, M.L.W. Thewalt, S.A. Lyon , K.M. Itoh , M.S. Brandt, “Electron paramagnetic resonance of boron acceptors in isotopically purified silicon,” Physical Review B 81, 16103 (2010).
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J.J.L. Morton, A.M. Tyryshkin, R.M. Brown, S. Shankar, B.W. Lovett, A. Ardavan, T. Schenkel, E.E. Haller, J.W. Ager, S.A. Lyon, “Solid-state quantum memory using the P-31 nuclear spin,” Nature, 455, 1085 (2008).
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A. Ardavan, J.J.L. Morton, S.C. Benjamin, K. Porfyrakis, G. Andrew, D. Briggs, A.M. Tyryshkin, S.A. Lyon, “Manipulation of quantum information in N@C-60 using electron and nuclear magnetic resonance,” Physica Status Solidi B-Basic Solid State Physics, 244, 3874 (2007).
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A. M. Tyryshkin, J. J. L. Morton, A. Ardavan, and S. A. Lyon, Davies electron-nuclear double resonance revisited: Enhanced sensitivity and nuclear spin relaxation, Journal Of Chemical Physics 124 (2006).
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T. Schenkel, J. A. Liddle, A. Persaud, A. M. Tyryshkin, S. A. Lyon, R. de Sousa, K. B. Whaley, J. Bokor, J. Shangkuan, and I. Chakarov, Electrical activation and electron spin coherence of ultralow dose antimony implants in silicon, Applied Physics Letters 88 (2006).
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H. Malissa, W. Jantsch, G. Chen, D. Gruber, H. Lichtenberger, F. Schaffler, Z. Wilamowski, A. Tyryshkin, and S. A. Lyon, Investigation of the spin properties of electrons in zero-dimensional sige structures by electron paramagnetic resonance, Materials Science And Engineering B-Solid State Materials For Advanced Technology 126, 172 (2006).
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K. Lai, T. M. Lu, W. Pan, D. C. Tsui, S. A. Lyon, J. Liu, Y. H. Xie, M. Muhlberger, and F. Schaffler, Valley splitting of Si/Si1-xGex heterostructures in tilted magnetic fields, Physical Review B 73 (2006).
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S. C. Benjamin, A. Ardavan, G. Andrew, D. Briggs, D. A. Britz, D. Gunlycke, J. Jefferson, M. A. G. Jones, D. F. Leigh, B. W. Lovett, A. N. Khlobystov, S. A. Lyon, J. J. L. Morton, K. Porfyrakis, M. R. Sambrook, and A. M. Tyryshkin, Towards a fullerene-based quantum computer, Journal Of Physics-Condensed Matter 18, S867 (2006).
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K. Lai, P. Ye, W. Pan, D.C. Tsui, S.A. Lyon, M. Mühlberger, F. Schäffler, “Modulation of the high mobility two-dimensional electrons in Si/SiGe using atomic-layer-deposited gate dielectric,” App. Phys. Lett. 87, 142103, (2005).
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M. Austin, H. Ge, W. Wu, M. Li, Z. Yu, D. Wasserman, S.A. Lyon, S. Y. Chou, "Fabrication of 5 nm linewidth and 14 nm pitch features by nanoimprint lithography," Appl. Phys. Lett. 84, 5299 (2004).